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BZX84C47-HE3-18

BZX84C47-HE3-18

BZX84C47-HE3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 170Ohm ±5% 47V 50nA @ 32.9V -55°C~150°C 300mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

BZX84C47-HE3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Weight 8.788352mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 3
JESD-30 Code R-PDSO-G3
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 170Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 50nA @ 32.9V
Power Dissipation 300mW
Max Reverse Leakage Current 50nA
Impedance-Max 170Ohm
Reference Voltage 47V
Zener Voltage 47V
Voltage Tol-Max 5%
Working Test Current 2mA
Voltage Tolerance 5%
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.03455 $0.3455
BZX84C47-HE3-18 Product Details

BZX84C47-HE3-18 Overview


An electrical device like this requires a reverse leakage current of 50nA @ 32.9V.A maximum voltage (Tol) can be supplied if 5% is set.During reverse leakage, the maximum current reaches 50nA.This device must be operated with the working test voltage set to 2mA.

BZX84C47-HE3-18 Features


reverse leakage current of 50nA @ 32.9V
50nA @ 32.9V is the maximum voltage (Tol)
Reverse leakage current reaches 50nA
the working test voltage to 2mA
minimal dynamic impedance is 2mA


BZX84C47-HE3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
BZX84C47-HE3-18 applications of zener single diodes.


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