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EGP31C-E3/C

EGP31C-E3/C

EGP31C-E3/C

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO201AD

SOT-23

EGP31C-E3/C Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case DO-201AD, Axial
Supplier Device Package DO-201AD
PackagingTape & Reel (TR)
Series SUPERECTIFIER®
Part StatusActive
Moisture Sensitivity Level (MSL) Not Applicable
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 150V
Voltage - Forward (Vf) (Max) @ If 950mV @ 3A
Operating Temperature - Junction -65°C~175°C
Voltage - DC Reverse (Vr) (Max) 150V
Current - Average Rectified (Io) 3A
Reverse Recovery Time 50ns
Capacitance @ Vr, F 117pF @ 4V 1MHz
RoHS StatusROHS3 Compliant
In-Stock:10401 items

Pricing & Ordering

QuantityUnit PriceExt. Price

About EGP31C-E3/C

The EGP31C-E3/C from Vishay Semiconductor Diodes Division is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 150V 3A DO201AD.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the EGP31C-E3/C, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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