ESH1B-M3/5AT

new-10%

Manufacturer part number:ESH1B-M3/5AT

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 100V 1A DO214AC

Case Package:SOT-23

Datasheet:ESH1B-M3/5AT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE, LOW POWER LOSS
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
JESD-30 Code	R-PDSO-C2
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 100V
Voltage - Forward (Vf) (Max) @ If	900mV @ 1A
Forward Current	1A
Operating Temperature - Junction	-55°C~175°C
Output Current-Max	1A
Max Reverse Voltage (DC)	100V
Average Rectified Current	1A
Reverse Recovery Time	25 ns
Peak Reverse Current	1μA
Max Repetitive Reverse Voltage (Vrrm)	100V
Capacitance @ Vr, F	25pF @ 4V 1MHz
Peak Non-Repetitive Surge Current	50A
RoHS Status	ROHS3 Compliant