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ESH1B-M3/61T

ESH1B-M3/61T

ESH1B-M3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

SOT-23

ESH1B-M3/61T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-PDSO-C2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 100V
Voltage - Forward (Vf) (Max) @ If 900mV @ 1A
Forward Current 1A
Operating Temperature - Junction -55°C~175°C
Output Current-Max 1A
Max Reverse Voltage (DC) 100V
Average Rectified Current 1A
Reverse Recovery Time 25 ns
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Capacitance @ Vr, F 25pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 50A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
14,400 $0.14000 $1.96

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