ESH1C-E3/5AT

new-10%

Manufacturer part number:ESH1C-E3/5AT

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 150V 1A DO214AC

Case Package:SOT-23

Datasheet:ESH1C-E3/5AT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Number of Pins	2
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE, LOW POWER LOSS
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	2
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	1μA @ 150V
Voltage - Forward (Vf) (Max) @ If	900mV @ 1A
Forward Current	1A
Operating Temperature - Junction	-55°C~175°C
Max Surge Current	50A
Output Current-Max	1A
Forward Voltage	900mV
Max Reverse Voltage (DC)	150V
Average Rectified Current	1A
Reverse Recovery Time	25 ns
Peak Reverse Current	1μA
Max Repetitive Reverse Voltage (Vrrm)	150V
Peak Non-Repetitive Surge Current	50A
Reverse Voltage	150V
Recovery Time	25 ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant