ESH2B-E3/5BT

new-10%

Manufacturer part number:ESH2B-E3/5BT

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 100V 2A DO214AA

Case Package:SOT-23

Datasheet:ESH2B-E3/5BT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-214AA, SMB
Number of Pins	2
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2014
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE, LOW POWER LOSS
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	ESH2B
Pin Count	2
Number of Elements	1
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	2μA @ 100V
Voltage - Forward (Vf) (Max) @ If	930mV @ 2A
Forward Current	2A
Operating Temperature - Junction	-55°C~175°C
Max Surge Current	60A
Output Current-Max	2A
Application	EFFICIENCY
Max Reverse Voltage (DC)	100V
Average Rectified Current	2A
Number of Phases	1
Reverse Recovery Time	35 ns
Peak Reverse Current	2μA
Max Repetitive Reverse Voltage (Vrrm)	100V
Peak Non-Repetitive Surge Current	60A
Reverse Voltage	100V
Recovery Time	25 ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant