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ESH2D-M3/52T

ESH2D-M3/52T

ESH2D-M3/52T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO214AA

SOT-23

ESH2D-M3/52T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 200V
Voltage - Forward (Vf) (Max) @ If 930mV @ 2A
Operating Temperature - Junction -55°C~175°C
Output Current-Max 2A
Application EFFICIENCY
Voltage - DC Reverse (Vr) (Max) 200V
Max Reverse Voltage (DC) 200V
Average Rectified Current 2A
Number of Phases 1
Reverse Recovery Time 35 ns
Capacitance @ Vr, F 30pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 60A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
12,000 $0.12802 $1.53624

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