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ESH3B-M3/9AT

ESH3B-M3/9AT

ESH3B-M3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 3A DO214AB

SOT-23

ESH3B-M3/9AT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 21 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 100V
Voltage - Forward (Vf) (Max) @ If 900mV @ 3A
Operating Temperature - Junction -55°C~175°C
Output Current-Max 3A
Application EFFICIENCY
Voltage - DC Reverse (Vr) (Max) 100V
Max Reverse Voltage (DC) 100V
Average Rectified Current 3A
Number of Phases 1
Reverse Recovery Time 40 ns
Capacitance @ Vr, F 70pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 125A
Reverse Current-Max 5μA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
7,000 $0.24982 $1.74874

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