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ESH3C-E3/9AT

ESH3C-E3/9AT

ESH3C-E3/9AT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO214AB

SOT-23

ESH3C-E3/9AT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 21 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Number of Pins 2
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ESH3C
Pin Count 2
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 150V
Voltage - Forward (Vf) (Max) @ If 900mV @ 3A
Forward Current 3A
Operating Temperature - Junction -55°C~175°C
Max Surge Current 125A
Output Current-Max 3A
Application EFFICIENCY
Max Reverse Voltage (DC) 150V
Average Rectified Current 3A
Number of Phases 1
Reverse Recovery Time 40 ns
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 150V
Peak Non-Repetitive Surge Current 125A
Reverse Voltage 150V
Recovery Time 25 ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,500 $0.32659 $0.97977

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