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ESH3DHE3/57T

ESH3DHE3/57T

ESH3DHE3/57T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

SOT-23

ESH3DHE3/57T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Number of Pins 2
Supplier Device Package DO-214AB (SMC)
Packaging Tape & Reel (TR)
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Base Part Number ESH3D
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 200V
Voltage - Forward (Vf) (Max) @ If 900mV @ 3A
Forward Current 3A
Operating Temperature - Junction -55°C~175°C
Max Surge Current 125A
Voltage - DC Reverse (Vr) (Max) 200V
Current - Average Rectified (Io) 3A
Max Reverse Voltage (DC) 200V
Average Rectified Current 3A
Reverse Recovery Time 40 ns
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Peak Non-Repetitive Surge Current 125A
Reverse Voltage 200V
Recovery Time 25 ns
Radiation Hardening No
RoHS Status ROHS3 Compliant

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