FESB8DT-E3/45

new-10%

Manufacturer part number:FESB8DT-E3/45

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 200V 8A TO263AB

Case Package:SOT-23

Datasheet:FESB8DT-E3/45 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tube
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE, LOW LEAKAGE CURRENT
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	FESB8D
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 200V
Voltage - Forward (Vf) (Max) @ If	950mV @ 8A
Forward Current	8A
Operating Temperature - Junction	-55°C~150°C
Max Surge Current	125A
Output Current-Max	8A
Application	EFFICIENCY
Max Reverse Voltage (DC)	200V
Average Rectified Current	8A
Number of Phases	1
Reverse Recovery Time	35 ns
Peak Reverse Current	10μA
Max Repetitive Reverse Voltage (Vrrm)	200V
Peak Non-Repetitive Surge Current	125A
Reverse Voltage	200V
Recovery Time	35 ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant