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FESB8GT-E3/45

FESB8GT-E3/45

FESB8GT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

SOT-23

FESB8GT-E3/45 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 27 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
Base Part Number FESB8G
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 400V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 8A
Forward Current 8A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 125A
Output Current-Max 8A
Application EFFICIENCY
Max Reverse Voltage (DC) 400V
Average Rectified Current 8A
Number of Phases 1
Reverse Recovery Time 50 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 400V
Peak Non-Repetitive Surge Current 125A
Reverse Voltage 400V
Recovery Time 50 ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.67193 $0.67193

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