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G2SB80-E3/45

G2SB80-E3/45

G2SB80-E3/45

Vishay Semiconductor Diodes Division

G2SB80-E3/45 datasheet pdf and Diodes - Bridge Rectifiers product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

G2SB80-E3/45 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-SIP, GBL
Number of Pins 4
Diode Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
Subcategory Bridge Rectifier Diodes
Technology Standard
Pin Count 4
Number of Elements 4
Element Configuration Single
Diode Type Single Phase
Current - Reverse Leakage @ Vr 50μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1V @ 750mA
Case Connection ISOLATED
Forward Current 1.5A
Max Reverse Leakage Current 5μA
Max Surge Current 80A
Number of Phases 1
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 800V
Voltage - Peak Reverse (Max) 800V
Height 10.7mm
Length 20.9mm
Width 3.56mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.49243 $0.98486
G2SB80-E3/45 Product Details

G2SB80-E3/45 Overview


The device has 4 pins.There is no forward voltage applied to this device.The component is available as a 4-SIP, GBL package.Bridge rectifier is important to monBridge rectifieror the reverse leakage current and not allow Bridge rectifier to exceed 5μA.Through Hole is the mounting method for the device.Its normal operation is ensured by operating at a temperature of -55°C~150°C TJ.Surge current should be monitored and not be allowed to exceed 80A.Powering this device requires a peak reverse voltage of 5μA.

G2SB80-E3/45 Features


4 pin count
1.5A forward voltage
forward voltage of 1.5A
4-SIP, GBL package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 5μA
a reverse voltage peak of 5μA

G2SB80-E3/45 Applications


There are a lot of Vishay Semiconductor Diodes Division G2SB80-E3/45 applications of bridge rectifiers.

  • Electrically isolated aluminum case
  • Mining – SCR power bridges, solid state starters and input rectifiers
  • Welding systems – Input rectifiers and fast recovery diodes
  • Electroplating systems – Input SCRs and output rectifiers
  • Supplies for DC power equipment
  • Rectifier for induction heating
  • Transportation – Traction rectifiers and auxiliary rectifiers
  • Military and other high-reliability applications
  • Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
  • Solid state SCR based switches

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