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G3SBA60L-5708M3/51

G3SBA60L-5708M3/51

G3SBA60L-5708M3/51

Vishay Semiconductor Diodes Division

G3SBA60L-5708M3/51 datasheet pdf and Diodes - Bridge Rectifiers product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

G3SBA60L-5708M3/51 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case 4-SIP, GBU
Supplier Device Package GBU
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology Standard
Diode Type Single Phase
Current - Reverse Leakage @ Vr 5μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1V @ 2A
Current - Average Rectified (Io) 2.3A
Voltage - Peak Reverse (Max) 600V
RoHS Status ROHS3 Compliant
G3SBA60L-5708M3/51 Product Details

G3SBA60L-5708M3/51 Overview


The component is available as a 4-SIP, GBU package.In order to ensure normal operation, the temperature must be set to -55°C~150°C TJ.

G3SBA60L-5708M3/51 Features


4-SIP, GBU package
operating at a temperature of -55°C~150°C TJ

G3SBA60L-5708M3/51 Applications


There are a lot of Vishay Semiconductor Diodes Division G3SBA60L-5708M3/51 applications of bridge rectifiers.

  • Electroplating systems – Input SCRs and output rectifiers
  • Working peak reverse voltages 200 to 1 ,000 volts
  • High forward surge current capability
  • Crowbar systems for motor drives
  • SCR and diode based input rectifiers
  • Mining – SCR power bridges, solid state starters and input rectifiers
  • Uninterruptible power supplies – SCR transfer switches and input rectifiers
  • Inductive heating – Input rectifiers
  • Solid state SCR based switches
  • Controlled avalanche characteristics

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