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GA400TD25S

GA400TD25S

GA400TD25S

Vishay Semiconductor Diodes Division

IGBT FAST 250V 400A INT-A-PAK

SOT-23

GA400TD25S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Dual INT-A-PAK (3 + 8)
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 11
ECCN Code EAR99
Terminal Finish TIN LEAD
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 250V
Max Power Dissipation 1.35kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) 235
Current Rating 400A
Base Part Number GA*TD
Pin Count 11
JESD-30 Code R-XUFM-X11
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1350W
Transistor Application POWER CONTROL
Rise Time 365ns
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 400A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 250V
Input Capacitance 36nF
Turn On Time 1615 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 400A
Turn Off Time-Nom (toff) 1633 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 36nF @ 30V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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