GB35XF120K

new-10%

Manufacturer part number:GB35XF120K

Manufacturer:Vishay Semiconductor Diodes Division

Description:MODULE IGBT 1200V 35A ECONO2 6PK

Case Package:SOT-23

Datasheet:GB35XF120K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	ECONO2
Number of Pins	2
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	17
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	284W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	35A
Pin Count	17
JESD-30 Code	R-XUFM-X17
Number of Elements	6
Configuration	Three Phase Inverter
Case Connection	ISOLATED
Power - Max	284W
Transistor Application	MOTOR CONTROL
Rise Time	35ns
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	3V
Max Collector Current	50A
Current - Collector Cutoff (Max)	100μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	3.475nF
Turn On Time	85 ns
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 50A
Turn Off Time-Nom (toff)	645 ns
IGBT Type	NPT
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	3.475nF @ 30V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead