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GBU8J-5410M3/51

GBU8J-5410M3/51

GBU8J-5410M3/51

Vishay Semiconductor Diodes Division

GBU8J-5410M3/51 datasheet pdf and Diodes - Bridge Rectifiers product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

GBU8J-5410M3/51 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case 4-SIP, GBU
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology Standard
Diode Type Single Phase
Current - Reverse Leakage @ Vr 5μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1V @ 8A
Current - Average Rectified (Io) 3.9A
Voltage - Peak Reverse (Max) 600V
RoHS Status ROHS3 Compliant
GBU8J-5410M3/51 Product Details

GBU8J-5410M3/51 Overview


A 4-SIP, GBU package electronic component is basically a type of electronic component.In order for rectifier to operate normally, rectifier must be kept at a temperature of -55°C~150°C TJ.

GBU8J-5410M3/51 Features


4-SIP, GBU package
operating at a temperature of -55°C~150°C TJ

GBU8J-5410M3/51 Applications


There are a lot of Vishay Semiconductor Diodes Division GBU8J-5410M3/51 applications of bridge rectifiers.

  • Controlled avalanche characteristics
  • High forward surge current capability
  • SCR power bridges for solid state starters
  • Fuse-in-glass diodes design
  • Welding equipment
  • Electrically isolated aluminum case
  • Solid state SCR based switches
  • Uninterruptible power supplies – SCR transfer switches and input rectifiers
  • Electroplating systems – Input SCRs and output rectifiers
  • Military and other high-reliability applications

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