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GDZ16B-E3-08

  • GDZ16B-E3-08
  • GDZ16B-E3-08

GDZ16B-E3-08

GDZ16B-E3-08

Vishay Semiconductor Diodes Division

ZENER DIODE 50Ohm ±4% 16V 100nA @ 12V -55°C~150°C 200mW 2 Terminations SC-76, SOD-323

SOT-23

GDZ16B-E3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±4%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 50Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 12V
Power Dissipation 200mW
Impedance-Max 50Ohm
Reference Voltage 16V
Zener Voltage 16V
Voltage Tol-Max 2.04%
Working Test Current 5mA
Zener Current 100nA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
GDZ16B-E3-08 Product Details

GDZ16B-E3-08 Overview


An electrical device such as this requires reverse leakage current of 100nA @ 12V.A voltage of 2.04% is considered to be the maximum that can be output (Tol).Design-wise, diode is highly flexible, wdiodeh a zener current of 100nA.Setting the working test voltage to 5mA is required to operate this device.

GDZ16B-E3-08 Features


reverse leakage current of 100nA @ 12V
100nA @ 12V is the maximum voltage (Tol)
the zener current of 100nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


GDZ16B-E3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
GDZ16B-E3-08 applications of zener single diodes.


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