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GDZ8V2B-HE3-18

  • GDZ8V2B-HE3-18
  • GDZ8V2B-HE3-18

GDZ8V2B-HE3-18

GDZ8V2B-HE3-18

Vishay Semiconductor Diodes Division

ZENER DIODE 30Ohm ±2% 8.2V 500nA @ 5V -55°C~150°C 200mW 2 Terminations SC-76, SOD-323

SOT-23

GDZ8V2B-HE3-18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Weight 4.309128mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±2%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 30Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 5V
Power Dissipation 200mW
Max Reverse Leakage Current 500nA
Impedance-Max 30Ohm
Reference Voltage 8.2V
Zener Voltage 8.2V
Voltage Tol-Max 2.08%
Working Test Current 5mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
GDZ8V2B-HE3-18 Product Details

GDZ8V2B-HE3-18 Overview


This electrical device requires reverse leakage current of 500nA @ 5V.Tol is the maximum voltage that can be supplied (2.08%).Reverse leakage current reaches 500nA at its maximum.Working test voltage should be set to 5mA for this device to operate.

GDZ8V2B-HE3-18 Features


reverse leakage current of 500nA @ 5V
500nA @ 5V is the maximum voltage (Tol)
Reverse leakage current reaches 500nA
the working test voltage to 5mA
minimal dynamic impedance is 5mA


GDZ8V2B-HE3-18 Applications


There are a lot of Vishay Semiconductor Diodes Division
GDZ8V2B-HE3-18 applications of zener single diodes.


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