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GL34BHE3/98

GL34BHE3/98

GL34BHE3/98

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 500MA DO213

SOT-23

GL34BHE3/98 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-213AA (Glass)
Number of Pins 2
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
Series SUPERECTIFIER®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY, FREE WHEELING DIODE
HTS Code 8541.10.00.70
Subcategory Rectifier Diodes
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number GL34B
Pin Count 2
Reference Standard AEC-Q101
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 500mA
Case Connection ISOLATED
Forward Current 500mA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 10A
Output Current-Max 0.5A
Max Reverse Voltage (DC) 100V
Average Rectified Current 500mA
Reverse Recovery Time 1.5 μs
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Capacitance @ Vr, F 4pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 10A
Reverse Voltage 100V
Recovery Time 1.5 μs
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.15308 $0.7654

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