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GSIB2060N-M3/45

GSIB2060N-M3/45

GSIB2060N-M3/45

Vishay Semiconductor Diodes Division

GSIB2060N-M3/45 datasheet pdf and Diodes - Bridge Rectifiers product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

GSIB2060N-M3/45 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-SIP, GSIB-5S
Number of Pins 4
Diode Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Subcategory Bridge Rectifier Diodes
Technology Standard
Reach Compliance Code unknown
Number of Elements 1
Diode Type Single Phase
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1V @ 7.5A
Case Connection ISOLATED
Output Current-Max 3.5A
Current - Average Rectified (Io) 20A
Forward Voltage 1V
Number of Phases 1
Peak Non-Repetitive Surge Current 240A
Voltage - Peak Reverse (Max) 600V
Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,200 $1.55870 $1.5587
GSIB2060N-M3/45 Product Details

GSIB2060N-M3/45 Overview


A 4-SIP, GSIB-5S package is a type of electronic component.This device is mounted in the Through Hole position.In order to ensure normal operation, the temperature must be set to -55°C~150°C TJ.This device is capable of supporting the maximum output voltage of 3.5A.

GSIB2060N-M3/45 Features


4-SIP, GSIB-5S package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 3.5A

GSIB2060N-M3/45 Applications


There are a lot of Vishay Semiconductor Diodes Division GSIB2060N-M3/45 applications of bridge rectifiers.

  • Aviation – Standby power distribution, resistive heating
  • Military, hybrid vehicles and power supplies
  • Crowbar systems for motor drives
  • Welding systems – Input rectifiers and fast recovery diodes
  • Extremely robust construction
  • Controlled avalanche characteristics
  • Working peak reverse voltages 200 to 1 ,000 volts
  • High temperature and rectifiers
  • Mining – SCR power bridges, solid state starters and input rectifiers
  • High forward surge current capability

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