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GSIB660-E3/45

GSIB660-E3/45

GSIB660-E3/45

Vishay Semiconductor Diodes Division

GSIB660-E3/45 datasheet pdf and Diodes - Bridge Rectifiers product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

GSIB660-E3/45 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-SIP, GSIB-5S
Number of Pins 4
Diode Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Matte Tin (Sn)
Additional Feature UL RECOGNIZED
Subcategory Bridge Rectifier Diodes
Technology Standard
Pin Count 4
Number of Elements 1
Element Configuration Single
Diode Type Single Phase
Current - Reverse Leakage @ Vr 10μA @ 600V
Voltage - Forward (Vf) (Max) @ If 950mV @ 3A
Case Connection ISOLATED
Forward Current 2.8A
Max Reverse Leakage Current 10μA
Max Surge Current 180A
Forward Voltage 950mV
Number of Phases 1
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 180A
Height 20mm
Length 30mm
Width 4.6mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.95000 $1.95
10 $1.74900 $17.49
25 $1.65000 $41.25
100 $1.40580 $140.58
250 $1.32000 $330
500 $1.15500 $577.5
1,200 $0.95700 $0.957
3,600 $0.89100 $2.673
6,000 $0.85800 $5.148
GSIB660-E3/45 Product Details

GSIB660-E3/45 Overview


The number of pins is 4.In this device, the forward voltage is 2.8A.A 4-SIP, GSIB-5S package is a type of electronic component.Observe the reverse leakage current and do not allow it to exceed zero.Through Hole represents the mounting method.In order to ensure normal operation, the temperature must be set to -55°C~150°C TJ.Surge current should be monitored and not be allowed to exceed 180A.Powering this device is provided by a reverse voltage peak of 10μA.

GSIB660-E3/45 Features


4 pin count
2.8A forward voltage
forward voltage of 2.8A
4-SIP, GSIB-5S package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 10μA
a reverse voltage peak of 10μA

GSIB660-E3/45 Applications


There are a lot of Vishay Semiconductor Diodes Division GSIB660-E3/45 applications of bridge rectifiers.

  • Welding systems – Input rectifiers and fast recovery diodes
  • Military and other high-reliability applications
  • Power distribution – SCR based transformer tap changers
  • Low thermal resistance
  • Crowbar systems for motor drives
  • Uninterruptible power supplies – SCR transfer switches and input rectifiers
  • Fuse-in-glass diodes design
  • Extremely robust construction
  • Electrically isolated aluminum case
  • High forward surge current capability

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