MBR10100CT-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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MBR10100CT-E3/4W Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Packaging
Tube
Published
2014
Series
TMBS®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Base Part Number
MBR10100CT
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
100μA @ 100V
Voltage - Forward (Vf) (Max) @ If
850mV @ 5A
Forward Current
10A
Max Reverse Leakage Current
100μA
Operating Temperature - Junction
-65°C~150°C
Max Surge Current
120A
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
5A
Forward Voltage
850mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
5A
Peak Reverse Current
100μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Peak Non-Repetitive Surge Current
120A
Diode Configuration
1 Pair Common Cathode
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MBR10100CT-E3/4W Product Details
MBR10100CT-E3/4W Overview
In operation, this device will be set to 850mV volts forward.Keeping the surge current under 120A and preventing it from exceeding it should be the rule.Devices that have a forward voltage of 10A will operate.Array is powered by a reverse voltage peak of 100μA.The maximum reverse leakage current from a semiconductor device when reverse biased is 100μA.
MBR10100CT-E3/4W Features
850mV forward voltage a peak voltage of 100μA a reverse voltage peak of 100μA
MBR10100CT-E3/4W Applications
There are a lot of Vishay Semiconductor Diodes Division MBR10100CT-E3/4W applications of rectifier diode array.