MBR10H100CT-E3/45 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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MBR10H100CT-E3/45 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
2
Diode Element Material
SILICON
Packaging
Tube
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE, LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Base Part Number
MBR10H100CT
Pin Count
3
JESD-30 Code
R-PSFM-T3
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
3.5μA @ 100V
Voltage - Forward (Vf) (Max) @ If
760mV @ 5A
Forward Current
10A
Max Reverse Leakage Current
3.5μA
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
150A
Output Current-Max
5A
Application
EFFICIENCY
Forward Voltage
850mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
5A
Number of Phases
1
Peak Reverse Current
3.5μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Peak Non-Repetitive Surge Current
150A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
150A
Height
9.14mm
Length
10.4394mm
Width
4.826mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.532000
$1.532
10
$1.445283
$14.45283
100
$1.363475
$136.3475
500
$1.286297
$643.1485
1000
$1.213487
$1213.487
MBR10H100CT-E3/45 Product Details
MBR10H100CT-E3/45 Overview
In this case, the forward voltage has to be set at 850mV to operate the device.This device can support a maximum output voltage of 5A.A surge current should be monitored and should not exceed 150A.There will be no operation of this device when the forward voltage is set to 10A.This device is powered with reverse voltage peak of 3.5μA V.When reverse biased, its maximal reverse leakage current is 3.5μA, which is the current flowing from that semiconductor device.
MBR10H100CT-E3/45 Features
850mV forward voltage a maximum output voltage of 5A a peak voltage of 3.5μA a reverse voltage peak of 3.5μA
MBR10H100CT-E3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division MBR10H100CT-E3/45 applications of rectifier diode array.