MBR30H100CT-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
SOT-23
MBR30H100CT-E3/4W Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Packaging
Tube
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Base Part Number
MBR30H100CT
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5μA @ 100V
Voltage - Forward (Vf) (Max) @ If
820mV @ 15A
Forward Current
30A
Max Reverse Leakage Current
5μA
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
275A
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
15A
Max Reverse Voltage (DC)
100V
Average Rectified Current
15A
Peak Reverse Current
5μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Peak Non-Repetitive Surge Current
275A
Diode Configuration
1 Pair Common Cathode
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
MBR30H100CT-E3/4W Product Details
MBR30H100CT-E3/4W Overview
We should be monitoring the surge current and keeping it below 275A.Devices that have a forward voltage of 30A will operate.A reverse voltage peak of 5μA is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 5μA, which is the current created by its reverse bias.
MBR30H100CT-E3/4W Features
a peak voltage of 5μA a reverse voltage peak of 5μA
MBR30H100CT-E3/4W Applications
There are a lot of Vishay Semiconductor Diodes Division MBR30H100CT-E3/4W applications of rectifier diode array.