MBR30H100PT-E3/45 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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MBR30H100PT-E3/45 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tube
Published
2014
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
245
[email protected] Reflow Temperature-Max (s)
40
Pin Count
2
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
5μA @ 100V
Voltage - Forward (Vf) (Max) @ If
820mV @ 15A
Forward Current
15A
Max Reverse Leakage Current
500nA
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
265A
Application
EFFICIENCY
Forward Voltage
930mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
15A
Number of Phases
1
Peak Reverse Current
500nA
Max Repetitive Reverse Voltage (Vrrm)
100V
JEDEC-95 Code
TO-247AD
Peak Non-Repetitive Surge Current
265A
Diode Configuration
1 Pair Common Cathode
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
750
$1.83169
$1373.7675
MBR30H100PT-E3/45 Product Details
MBR30H100PT-E3/45 Overview
In operation, this device will be set to 930mV volts forward.Array should be a rule to monArrayor the surge current and not allow Array to exceed 265A.In operation, this device will be set to 15A volts forward.In devices such as this one, reverse voltage peak is set at 500nA.The maximum reverse leakage current from a semiconductor device when reverse biased is 500nA.
MBR30H100PT-E3/45 Features
930mV forward voltage a peak voltage of 500nA a reverse voltage peak of 500nA
MBR30H100PT-E3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division MBR30H100PT-E3/45 applications of rectifier diode array.