MBRB10H100CTHE3/45 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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MBRB10H100CTHE3/45 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Packaging
Tube
Published
2011
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
HTS Code
8541.10.00.80
Base Part Number
MBRB10H100CT
Pin Count
3
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
3.5μA @ 100V
Voltage - Forward (Vf) (Max) @ If
760mV @ 5A
Forward Current
10A
Max Reverse Leakage Current
3.5μA
Operating Temperature - Junction
-65°C~150°C
Max Surge Current
150A
Forward Voltage
850mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
5A
Peak Reverse Current
3.5μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Peak Non-Repetitive Surge Current
150A
Diode Configuration
1 Pair Common Cathode
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MBRB10H100CTHE3/45 Product Details
MBRB10H100CTHE3/45 Overview
In the case of 850mV forward voltage, the device will operate.In order to prevent the surge current from exceeding 150A, it should be monitored.There will be no operation of this device when the forward voltage is set to 10A.In devices such as this one, reverse voltage peak is set at 3.5μA.This semiconductor device's maximal reverse leakage current is 3.5μA kA, which is its reverse leakage current when reverse biased.
MBRB10H100CTHE3/45 Features
850mV forward voltage a peak voltage of 3.5μA a reverse voltage peak of 3.5μA
MBRB10H100CTHE3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division MBRB10H100CTHE3/45 applications of rectifier diode array.