MBRB10H90CT-E3/81 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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MBRB10H90CT-E3/81 Datasheet
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Specifications
Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Supplier Device Package
TO-263AB
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
3.5μA @ 90V
Voltage - Forward (Vf) (Max) @ If
760mV @ 5A
Forward Current
10A
Max Reverse Leakage Current
3.5μA
Operating Temperature - Junction
-65°C~150°C
Max Surge Current
150A
Voltage - DC Reverse (Vr) (Max)
90V
Current - Average Rectified (Io)
5A
Forward Voltage
850mV
Max Reverse Voltage (DC)
90V
Average Rectified Current
5A
Peak Reverse Current
3.5μA
Max Repetitive Reverse Voltage (Vrrm)
90V
Peak Non-Repetitive Surge Current
150A
Diode Configuration
1 Pair Common Cathode
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
MBRB10H90CT-E3/81 Product Details
MBRB10H90CT-E3/81 Overview
In the case of 850mV forward voltage, the device will operate.Array should be a rule to monArrayor the surge current and not allow Array to exceed 150A.When the forward voltage is set to 10A, this device will operate.A reverse voltage peak of 3.5μA is used to power devices like this one.When reverse biased, its maximal reverse leakage current is 3.5μA, which is the current flowing from that semiconductor device.
MBRB10H90CT-E3/81 Features
850mV forward voltage a peak voltage of 3.5μA a reverse voltage peak of 3.5μA
MBRB10H90CT-E3/81 Applications
There are a lot of Vishay Semiconductor Diodes Division MBRB10H90CT-E3/81 applications of rectifier diode array.