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MBRB30H45CT-E3/81

MBRB30H45CT-E3/81

MBRB30H45CT-E3/81

Vishay Semiconductor Diodes Division

MBRB30H45CT-E3/81 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

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MBRB30H45CT-E3/81 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 27 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 80μA @ 45V
Voltage - Forward (Vf) (Max) @ If 620mV @ 15A
Forward Current 30A
Max Reverse Leakage Current 80μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 150A
Application EFFICIENCY
Forward Voltage 730mV
Max Reverse Voltage (DC) 45V
Average Rectified Current 15A
Number of Phases 1
Peak Reverse Current 80μA
Max Repetitive Reverse Voltage (Vrrm) 45V
Peak Non-Repetitive Surge Current 150A
Diode Configuration 1 Pair Common Cathode
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.41550 $1132.4
MBRB30H45CT-E3/81 Product Details

MBRB30H45CT-E3/81 Overview


This device will operate when the forward voltage is set to 730mV.Keeping the surge current under 150A and preventing it from exceeding it should be the rule.When the forward voltage is set to 30A, this device will operate.Devices like this one are powered with a reverse voltage peak of 80μA.The maximum reverse leakage current from a semiconductor device when reverse biased is 80μA.

MBRB30H45CT-E3/81 Features


730mV forward voltage
a peak voltage of 80μA
a reverse voltage peak of 80μA

MBRB30H45CT-E3/81 Applications


There are a lot of Vishay Semiconductor Diodes Division MBRB30H45CT-E3/81 applications of rectifier diode array.

  • Rectifier for drives applications
  • Crowbar applications
  • General Rectification
  • Rectifiers for UBS
  • Battery chargers
  • Rectifiers in switch mode power supplies (SMPS)
  • Free wheeling diode in low voltage converters

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