Name: MBRF2035CT-E3/45
Brand: Vishay Semiconductor Diodes Division
SKU: MBRF2035CT-E3/45
Availability: InStock

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MBRF2035CT-E3/45

Manufacturer part number:MBRF2035CT-E3/45

Manufacturer:Vishay Semiconductor Diodes Division

Description:MBRF2035CT-E3/45 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:MBRF2035CT-E3/45 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack, Isolated Tab
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tube
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Additional Feature	FREE WHEELING DIODE, LOW POWER LOSS
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	SINGLE
Pin Count	3
Number of Elements	2
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Schottky
Current - Reverse Leakage @ Vr	100μA @ 35V
Voltage - Forward (Vf) (Max) @ If	650mV @ 10A
Forward Current	20A
Max Reverse Leakage Current	100μA
Operating Temperature - Junction	-65°C~150°C
Max Surge Current	150A
Application	EFFICIENCY
Max Reverse Voltage (DC)	35V
Average Rectified Current	10A
Number of Phases	1
Peak Reverse Current	100μA
Max Repetitive Reverse Voltage (Vrrm)	35V
JEDEC-95 Code	TO-220AB
Peak Non-Repetitive Surge Current	150A
Diode Configuration	1 Pair Common Cathode
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

MBRF2035CT-E3/45 Product Details

MBRF2035CT-E3/45 Overview

We should be monitoring the surge current and keeping it below 150A.This device will operate when the forward voltage is set to 20A.Powered by reverse voltage, this device has a peak voltage of 100μA.Its maximal reverse leakage current is 100μA, which is the current from that semiconductor device when the device is reverse biased.