MBRF30H50CT-E3/45 datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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MBRF30H50CT-E3/45 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE, LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Pin Count
3
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
60μA @ 50V
Voltage - Forward (Vf) (Max) @ If
680mV @ 15A
Forward Current
30A
Max Reverse Leakage Current
60μA
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
150A
Application
EFFICIENCY
Max Reverse Voltage (DC)
50V
Average Rectified Current
15A
Number of Phases
1
Peak Reverse Current
60μA
Max Repetitive Reverse Voltage (Vrrm)
50V
JEDEC-95 Code
TO-220AB
Peak Non-Repetitive Surge Current
150A
Diode Configuration
1 Pair Common Cathode
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
MBRF30H50CT-E3/45 Product Details
MBRF30H50CT-E3/45 Overview
Surge currents should be monitored and prevented from exceeding 150A.In this case, the forward voltage has to be set at 30A to operate the device.Array is powered by a reverse voltage peak of 60μA.When reverse biased, its maximal reverse leakage current is 60μA, which corresponds to its maximum reverse leakage current.
MBRF30H50CT-E3/45 Features
a peak voltage of 60μA a reverse voltage peak of 60μA
MBRF30H50CT-E3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division MBRF30H50CT-E3/45 applications of rectifier diode array.