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MMBZ4710-G3-08

MMBZ4710-G3-08

MMBZ4710-G3-08

Vishay Semiconductor Diodes Division

ZENER DIODE ±5% 25V 10nA @ 19V -55°C~150°C 350mW 3 Terminations TO-236-3, SC-59, SOT-23-3

SOT-23

MMBZ4710-G3-08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 8.107964mg
Diode Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2017
Tolerance ±5%
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
HTS Code 8541.10.00.50
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
Number of Elements 1
Polarity UNIDIRECTIONAL
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 10nA @ 19V
Power Dissipation 350mW
Max Reverse Leakage Current 10nA
Reference Voltage 25V
Zener Voltage 25V
Voltage Tol-Max 5%
Working Test Current 0.05mA
Voltage Tolerance 5%
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
MMBZ4710-G3-08 Product Details

MMBZ4710-G3-08 Overview


A reverse leakage current of 10nA @ 19V is required to supply this electrical device.Voltage (Tol) is limited to 5%.10nA is the maximum reverse leakage current.To operate this device, set the working test voltage to 0.05mA.

MMBZ4710-G3-08 Features


reverse leakage current of 10nA @ 19V
10nA @ 19V is the maximum voltage (Tol)
Reverse leakage current reaches 10nA
the working test voltage to 0.05mA
minimal dynamic impedance is 0.05mA


MMBZ4710-G3-08 Applications


There are a lot of Vishay Semiconductor Diodes Division
MMBZ4710-G3-08 applications of zener single diodes.


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