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S2BHE3_A/I

S2BHE3_A/I

S2BHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1.5A DO214AA

SOT-23

S2BHE3_A/I Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AA, SMB
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 30
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 100V
Voltage - Forward (Vf) (Max) @ If 1.15V @ 1.5A
Operating Temperature - Junction -55°C~150°C
Application GENERAL PURPOSE
Voltage - DC Reverse (Vr) (Max) 100V
Max Reverse Voltage (DC) 100V
Average Rectified Current 1.5A
Number of Phases 1
Reverse Recovery Time 2 μs
Capacitance @ Vr, F 16pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 50A
Reverse Current-Max 1μA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
6,400 $0.11214 $0.67284

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