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S4PGHM3_A/H

S4PGHM3_A/H

S4PGHM3_A/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 4A TO277A

SOT-23

S4PGHM3_A/H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-277, 3-PowerDFN
Number of Pins 3
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2016
Series Automotive, AEC-Q101, eSMP®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Technology AVALANCHE
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Common Anode
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 400V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 4A
Case Connection CATHODE
Forward Current 4A
Operating Temperature - Junction -55°C~150°C
Application GENERAL PURPOSE
Max Reverse Voltage (DC) 400V
Average Rectified Current 4A
Number of Phases 1
Reverse Recovery Time 2.5 μs
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 400V
JEDEC-95 Code TO-277A
Capacitance @ Vr, F 30pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 100A
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,500 $0.23160 $0.2316
3,000 $0.21360 $0.6408
7,500 $0.20160 $1.4112
10,500 $0.19560 $1.956

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