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S8CMHM3/I

S8CMHM3/I

S8CMHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DO214AB

SOT-23

S8CMHM3/I Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mounting Type Surface Mount
Package / Case DO-214AB, SMC
Surface Mount YES
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature FREE WHEELING DIODE, LOW LEAKAGE CURRENT
HTS Code 8541.10.00.80
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 985mV @ 8A
Operating Temperature - Junction -55°C~150°C
Output Current-Max 1.6A
Application GENERAL PURPOSE
Voltage - DC Reverse (Vr) (Max) 1000V
Current - Average Rectified (Io) 8A
Number of Phases 1
Reverse Recovery Time 4μs
Rep Pk Reverse Voltage-Max 1000V
Capacitance @ Vr, F 79pF @ 4V 1MHz
Non-rep Pk Forward Current-Max 200A
Reverse Current-Max 10μA
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price

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