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SE10FJ-M3/H

SE10FJ-M3/H

SE10FJ-M3/H

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO219AB

SOT-23

SE10FJ-M3/H Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-219AB
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F2
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.05V @ 1A
Operating Temperature - Junction -55°C~175°C
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 600V
Max Reverse Voltage (DC) 600V
Average Rectified Current 1A
Reverse Recovery Time 780 ns
Capacitance @ Vr, F 7.5pF @ 4V 1MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
30,000 $0.06690 $2.007

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