SE50PAB-M3/I

new-10%

Manufacturer part number:SE50PAB-M3/I

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 100V 5A DO221BC

Case Package:SOT-23

Datasheet:SE50PAB-M3/I Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mounting Type	Surface Mount
Package / Case	DO-221BC, SMA Flat Leads Exposed Pad
Surface Mount	YES
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2017
Series	eSMP®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	LOW LEAKAGE CURRENT
HTS Code	8541.10.00.80
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F2
Operating Temperature (Max)	175°C
Number of Elements	1
Configuration	SINGLE
Speed	Standard Recovery >500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 100V
Voltage - Forward (Vf) (Max) @ If	1.16V @ 5A
Case Connection	CATHODE
Operating Temperature - Junction	-55°C~175°C
Output Current-Max	1.6A
Application	GENERAL PURPOSE
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	5A
Number of Phases	1
Reverse Recovery Time	2μs
Rep Pk Reverse Voltage-Max	100V
Capacitance @ Vr, F	32pF @ 4V 1MHz
Non-rep Pk Forward Current-Max	42A
Reverse Current-Max	10μA
RoHS Status	ROHS3 Compliant