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TZQ5260B-GS18

TZQ5260B-GS18

TZQ5260B-GS18

Vishay Semiconductor Diodes Division

ZENER DIODE 93Ohm ±5% 43V 100nA @ 33V -65°C~175°C 500mW 2 Terminations SOD-80 Variant

SOT-23

TZQ5260B-GS18 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-80 Variant
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±5%
JESD-609 Code e2
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN SILVER
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 260
Pin Count 2
JESD-30 Code O-LELF-R2
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 93Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 100nA @ 33V
Power Dissipation 500mW
Voltage - Forward (Vf) (Max) @ If 1.5V @ 200mA
Case Connection ISOLATED
Max Reverse Leakage Current 100nA
Impedance-Max 93Ohm
Reference Voltage 43V
Zener Voltage 43V
Working Test Current 3mA
Voltage Tolerance 5%
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
10,000 $0.02800 $0.28
TZQ5260B-GS18 Product Details

TZQ5260B-GS18 Overview


The reverse leakage current for this electrical device should be 100nA @ 33V.A maximum reverse leakage current of 100nA is observed.This device should be operated at 3mA on the working test voltage.For its operation, maximum voltage - Forward (Vf) 1.5V @ 200mA is provided.

TZQ5260B-GS18 Features


reverse leakage current of 100nA @ 33V
100nA @ 33V is the maximum voltage (Tol)
Reverse leakage current reaches 100nA
the working test voltage to 3mA
minimal dynamic impedance is 3mA


TZQ5260B-GS18 Applications


There are a lot of Vishay Semiconductor Diodes Division
TZQ5260B-GS18 applications of zener single diodes.


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