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TZS4705-GS08

TZS4705-GS08

TZS4705-GS08

Vishay Semiconductor Diodes Division

ZENER DIODE ±5% 18V 50nA @ 13.6V -65°C~175°C 500mW 2 Terminations SOD-80 Variant

SOT-23

TZS4705-GS08 Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-80 Variant
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2016
Tolerance ±5%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Terminal Position END
Terminal Form WRAP AROUND
Pin Count 2
JESD-30 Code O-LELF-R2
Number of Elements 1
Polarity UNIDIRECTIONAL
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 50nA @ 13.6V
Power Dissipation 500mW
Voltage - Forward (Vf) (Max) @ If 1.5V @ 100mA
Case Connection ISOLATED
Max Reverse Leakage Current 50nA
Reference Voltage 18V
Zener Voltage 18V
Voltage Tol-Max 5%
Working Test Current 0.05mA
Voltage Tolerance 5%
Zener Current 13.2mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
TZS4705-GS08 Product Details

TZS4705-GS08 Overview


A reverse leakage current of 50nA @ 13.6V is required to supply this electrical device.Voltage (Tol) is limited to 5%.50nA is the maximum reverse leakage current.The design is highly flexible due to the zener current of 13.2mA.To operate this device, set the working test voltage to 0.05mA.1.5V @ 100mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

TZS4705-GS08 Features


reverse leakage current of 50nA @ 13.6V
50nA @ 13.6V is the maximum voltage (Tol)
Reverse leakage current reaches 50nA
the zener current of 13.2mA
the working test voltage to 0.05mA
minimal dynamic impedance is 0.05mA


TZS4705-GS08 Applications


There are a lot of Vishay Semiconductor Diodes Division
TZS4705-GS08 applications of zener single diodes.


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