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TZS4709-GS08

TZS4709-GS08

TZS4709-GS08

Vishay Semiconductor Diodes Division

ZENER DIODE ±5% 24V 10nA @ 18.2V -65°C~175°C 500mW 2 Terminations SOD-80 Variant

SOT-23

TZS4709-GS08 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-80 Variant
Number of Pins 2
Diode Element Material SILICON
Operating Temperature -65°C~175°C
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
Published 2014
Tolerance ±5%
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Terminal Position END
Terminal Form WRAP AROUND
Pin Count 2
Number of Elements 1
Polarity UNIDIRECTIONAL
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 10nA @ 18.2V
Power Dissipation 500mW
Voltage - Forward (Vf) (Max) @ If 1.5V @ 100mA
Case Connection ISOLATED
Max Reverse Leakage Current 10nA
Test Current 50μA
Reference Voltage 24V
Zener Voltage 24V
Voltage Tol-Max 5%
Voltage Tolerance 5%
Zener Current 9.9mA
Height 1.6mm
Length 3.7mm
Width 1.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
12,500 $0.03230 $0.3876
TZS4709-GS08 Product Details

TZS4709-GS08 Overview


A reverse leakage current of 10nA @ 18.2V is required to supply this electrical device.Voltage (Tol) is limited to 5%.10nA is the maximum reverse leakage current.The design is highly flexible due to the zener current of 9.9mA.1.5V @ 100mA is reached when the maximum voltage - Forward (Vf) is supplied for its operation.

TZS4709-GS08 Features


reverse leakage current of 10nA @ 18.2V
10nA @ 18.2V is the maximum voltage (Tol)
Reverse leakage current reaches 10nA
the zener current of 9.9mA


TZS4709-GS08 Applications


There are a lot of Vishay Semiconductor Diodes Division
TZS4709-GS08 applications of zener single diodes.


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