UGB5JT-E3/45

new-10%

Manufacturer part number:UGB5JT-E3/45

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 600V 5A TO263AB

Case Package:SOT-23

Datasheet:UGB5JT-E3/45 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Diode Element Material	SILICON
Packaging	Tube
Published	2013
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE
HTS Code	8541.10.00.80
Subcategory	Rectifier Diodes
Terminal Position	SINGLE
Terminal Form	GULL WING
Base Part Number	UGB5J
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	30μA @ 600V
Voltage - Forward (Vf) (Max) @ If	1.75V @ 5A
Forward Current	5A
Operating Temperature - Junction	-55°C~150°C
Max Surge Current	65A
Output Current-Max	5A
Application	EFFICIENCY
Max Reverse Voltage (DC)	600V
Average Rectified Current	5A
Number of Phases	1
Reverse Recovery Time	50 ns
Peak Reverse Current	30μA
Max Repetitive Reverse Voltage (Vrrm)	600V
Peak Non-Repetitive Surge Current	65A
Reverse Voltage	600V
Recovery Time	50 ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant