UGB8AT-E3/81

new-10%

Manufacturer part number:UGB8AT-E3/81

Manufacturer:Vishay Semiconductor Diodes Division

Description:DIODE GEN PURP 50V 8A TO263AB

Case Package:SOT-23

Datasheet:UGB8AT-E3/81 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	TO-263AB
Packaging	Tape & Reel (TR)
Published	2013
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Element Configuration	Common Cathode
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 50V
Voltage - Forward (Vf) (Max) @ If	1V @ 8A
Forward Current	8A
Operating Temperature - Junction	-55°C~150°C
Max Surge Current	150A
Voltage - DC Reverse (Vr) (Max)	50V
Current - Average Rectified (Io)	8A
Forward Voltage	1.2V
Max Reverse Voltage (DC)	50V
Average Rectified Current	8A
Reverse Recovery Time	30 ns
Peak Reverse Current	10μA
Max Repetitive Reverse Voltage (Vrrm)	50V
Peak Non-Repetitive Surge Current	150A
Reverse Voltage	50V
Recovery Time	30 ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant