Welcome to Hotenda.com Online Store!

logo
userjoin
Home

UGB8FTHE3/81

UGB8FTHE3/81

UGB8FTHE3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 8A TO263AB

SOT-23

UGB8FTHE3/81 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 29 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn) - with Nickel (Ni) barrier
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 300V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 8A
Forward Current 8A
Operating Temperature - Junction -40°C~150°C
Output Current-Max 8A
Application EFFICIENCY
Max Reverse Voltage (DC) 300V
Average Rectified Current 8A
Number of Phases 1
Reverse Recovery Time 50 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 300V
Peak Non-Repetitive Surge Current 110A
Radiation Hardening No
RoHS Status ROHS3 Compliant

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News