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UGB8GT-E3/81

UGB8GT-E3/81

UGB8GT-E3/81

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 8A TO263AB

SOT-23

UGB8GT-E3/81 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Supplier Device Package TO-263AB
Packaging Tape & Reel (TR)
Published 2008
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 400V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 8A
Forward Current 8A
Operating Temperature - Junction -40°C~150°C
Max Surge Current 110A
Voltage - DC Reverse (Vr) (Max) 400V
Current - Average Rectified (Io) 8A
Forward Voltage 1.4V
Max Reverse Voltage (DC) 400V
Average Rectified Current 8A
Reverse Recovery Time 50 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 400V
Peak Non-Repetitive Surge Current 110A
Reverse Voltage 400V
Recovery Time 50 ns
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $0.75360 $602.88

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