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US1DHE3_A/I

US1DHE3_A/I

US1DHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

SOT-23

US1DHE3_A/I Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature FREE WHEELING DIODE
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number US1D
JESD-30 Code R-PDSO-C2
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1V @ 1A
Operating Temperature - Junction -55°C~150°C
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 200V
Max Reverse Voltage (DC) 200V
Average Rectified Current 1A
Reverse Recovery Time 50 ns
Capacitance @ Vr, F 15pF @ 4V 1MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
7,500 $0.12887 $0.90209

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