US1M-E3/5AT

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US1M-E3/5AT

Manufacturer part number:US1M-E3/5AT

Manufacturer:Vishay Semiconductor Diodes Division

Description:US1M-E3/5AT datasheet pdf and Diodes - Rectifiers - Single product details from Vishay Semiconductor Diodes Division stock available on our website

Case Package:SOT-23

Datasheet:US1M-E3/5AT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Number of Pins	2
Diode Element Material	SILICON
Packaging	Tape & Reel (TR)
Published	2011
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	FREE WHEELING DIODE
HTS Code	8541.10.00.80
Capacitance	10pF
Subcategory	Rectifier Diodes
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	US1M
Pin Count	2
Number of Elements	1
Voltage	1kV
Element Configuration	Single
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current	1A
Diode Type	Standard
Current - Reverse Leakage @ Vr	10μA @ 1000V
Voltage - Forward (Vf) (Max) @ If	1.7V @ 1A
Forward Current	1A
Operating Temperature - Junction	-55°C~150°C
Max Surge Current	30A
Voltage - DC Reverse (Vr) (Max)	1000V
Forward Voltage	1.7V
Max Reverse Voltage (DC)	1kV
Average Rectified Current	1A
Reverse Recovery Time	75 ns
Peak Reverse Current	10μA
Max Repetitive Reverse Voltage (Vrrm)	1kV
Capacitance @ Vr, F	10pF @ 4V 1MHz
Peak Non-Repetitive Surge Current	30A
Reverse Voltage	1kV
Max Forward Surge Current (Ifsm)	30A
Recovery Time	75 ns
Max Junction Temperature (Tj)	150°C
Height	2.29mm
Length	4.5mm
Width	2.79mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free