V30100C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website
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V30100C-E3/4W Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Diode Element Material
SILICON
Manufacturer Package Identifier
V30100C-E3/4W
Packaging
Tube
Published
2011
Series
TMBS®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Additional Feature
FREE WHEELING DIODE, LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Pin Count
3
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
500μA @ 100V
Voltage - Forward (Vf) (Max) @ If
800mV @ 15A
Forward Current
15A
Max Reverse Leakage Current
200μA
Operating Temperature - Junction
-40°C~150°C
Max Surge Current
140A
Application
EFFICIENCY
Forward Voltage
800mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
15A
Number of Phases
1
Peak Reverse Current
1A
Max Repetitive Reverse Voltage (Vrrm)
100V
JEDEC-95 Code
TO-220AB
Peak Non-Repetitive Surge Current
160A
Reverse Voltage
100V
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
160A
Max Junction Temperature (Tj)
150°C
Height
19.38mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.342368
$0.342368
10
$0.322989
$3.22989
100
$0.304707
$30.4707
500
$0.287460
$143.73
1000
$0.271188
$271.188
V30100C-E3/4W Product Details
V30100C-E3/4W Overview
This device will operate when the forward voltage is set to 800mV.Array should be a rule to monArrayor the surge current and not allow Array to exceed 140A.As long as the forward voltage is set to 15A, the device will operate.A reverse voltage peak of 1A is used to power devices like this one.A semiconductor device's maximum reverse leakage current is 200μA, which is the current created by its reverse bias.
V30100C-E3/4W Features
800mV forward voltage a peak voltage of 1A a reverse voltage peak of 1A
V30100C-E3/4W Applications
There are a lot of Vishay Semiconductor Diodes Division V30100C-E3/4W applications of rectifier diode array.