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VB20120C-E3/4W

VB20120C-E3/4W

VB20120C-E3/4W

Vishay Semiconductor Diodes Division

VB20120C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

VB20120C-E3/4W Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
Packaging Tube
Published 2011
Series TMBS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 700μA @ 120V
Voltage - Forward (Vf) (Max) @ If 900mV @ 10A
Forward Current 20A
Max Reverse Leakage Current 700μA
Operating Temperature - Junction -40°C~150°C
Max Surge Current 120A
Application EFFICIENCY
Forward Voltage 900mV
Max Reverse Voltage (DC) 120V
Average Rectified Current 10A
Number of Phases 1
Peak Reverse Current 700μA
Max Repetitive Reverse Voltage (Vrrm) 120V
Peak Non-Repetitive Surge Current 120A
Diode Configuration 1 Pair Common Cathode
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1,000 $0.86537 $0.86537
VB20120C-E3/4W Product Details

VB20120C-E3/4W Overview


As long as the forward voltage is set to 900mV, the device will operate.Maintaining a surge current under 120A and not letting it exceed it is the key to preventing it.There will be no operation of this device when the forward voltage is set to 20A.A reverse voltage peak of 700μA is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 700μA, which is the current created by its reverse bias.

VB20120C-E3/4W Features


900mV forward voltage
a peak voltage of 700μA
a reverse voltage peak of 700μA

VB20120C-E3/4W Applications


There are a lot of Vishay Semiconductor Diodes Division VB20120C-E3/4W applications of rectifier diode array.

  • Battery chargers
  • Rectifiers for UBS
  • Rectifier for drives applications
  • Rectifiers in switch mode power supplies (SMPS)
  • Crowbar applications
  • General Rectification
  • Free wheeling diode in low voltage converters

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