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VB20120S-E3/8W

VB20120S-E3/8W

VB20120S-E3/8W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 20A TO263AB

SOT-23

VB20120S-E3/8W Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2013
Series TMBS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Additional Feature FREE WHEELING DIODE, LOW POWER LOSS
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 40
Base Part Number VB20120S
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 300μA @ 120V
Voltage - Forward (Vf) (Max) @ If 1.12V @ 20A
Case Connection CATHODE
Forward Current 20A
Max Reverse Leakage Current 500μA
Operating Temperature - Junction -40°C~150°C
Max Surge Current 300A
Application EFFICIENCY
Max Reverse Voltage (DC) 120V
Average Rectified Current 20A
Number of Phases 1
Peak Reverse Current 300μA
Max Repetitive Reverse Voltage (Vrrm) 120V
Peak Non-Repetitive Surge Current 200A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
800 $1.04413 $835.304

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