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VB30200C-E3/4W

  • VB30200C-E3/4W
  • VB30200C-E3/4W

VB30200C-E3/4W

VB30200C-E3/4W

Vishay Semiconductor Diodes Division

VB30200C-E3/4W datasheet pdf and Diodes - Rectifiers - Arrays product details from Vishay Semiconductor Diodes Division stock available on our website

SOT-23

VB30200C-E3/4W Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Diode Element Material SILICON
Packaging Tube
Published 2014
Series TMBS®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Base Part Number VB30200C
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 160μA @ 200V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 15A
Case Connection ISOLATED
Forward Current 30A
Max Reverse Leakage Current 160μA
Operating Temperature - Junction -40°C~150°C
Max Surge Current 250A
Application EFFICIENCY
Forward Voltage 1.1V
Max Reverse Voltage (DC) 200V
Average Rectified Current 15A
Number of Phases 1
Peak Reverse Current 160μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Peak Non-Repetitive Surge Current 250A
Diode Configuration 1 Pair Common Cathode
Height 4.83mm
Length 10.45mm
Width 9.14mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.937341 $1.937341
10 $1.827680 $18.2768
100 $1.724226 $172.4226
500 $1.626629 $813.3145
1000 $1.534555 $1534.555
VB30200C-E3/4W Product Details

VB30200C-E3/4W Overview


A forward voltage of 1.1V will enable the device to operate.Surge currents should be monitored and prevented from exceeding 250A.In the case of 30A forward voltage, the device will operate.Array is powered by a reverse voltage peak of 160μA.When reverse biased, its maximal reverse leakage current is 160μA, which is the current flowing from that semiconductor device.

VB30200C-E3/4W Features


1.1V forward voltage
a peak voltage of 160μA
a reverse voltage peak of 160μA

VB30200C-E3/4W Applications


There are a lot of Vishay Semiconductor Diodes Division VB30200C-E3/4W applications of rectifier diode array.

  • General Rectification
  • Crowbar applications
  • Rectifiers in switch mode power supplies (SMPS)
  • Rectifier for drives applications
  • Free wheeling diode in low voltage converters
  • Battery chargers
  • Rectifiers for UBS

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